In situ strain electrical atomic force microscopy study on two?dimensional ternary transition metal dichalcogenides

Atomically thin two-dimensional (2D) alloys have attracted wide interests of study recently due to their potential in flexible electronic and optoelectronic applications. In particular, monolayer transition metal dichalcogenide (TMD) emerged as unique 2D semiconductors with tunable bandgaps, by means alloying. However, response surface electrical barrier height strain for TMD alloys–electrode interface is rarely explored. Apparently, revealing such strain-dependent evolution properties crucial developing advanced based electronics optoelectronics. Here we performed situ Kelvin probe force microscopy (KPFM) conductive atomic (C-AFM) investigations Mo0.4W0.6Se2 on Au coated substrate, where controlled uniaxial tensile applied. Both contact difference (CPD) Schottky heights (SBH) show obvious decreases the increase strain, which mainly strain-induced increment electron affinity. Our photoluminescence (PL) measurements also indicate changes band structures under strain. We further exploit substrate effects CPD alloy mostly used substrates SiO2/Si indium tin oxide (ITO)/glass. findings could strengthen foundation applications fields sensors, photodetectors, other wearable devices.